these miniature surface mount mosfets utilize a high cell density trench process to provide low r ds(on) and to ensure minimal power loss and heat dissipation. typical applications are dc-dc converters and power management in portable and battery-powered products such as computers, printers, pcmcia cards, cellular and cordless telephones. v ds (v) r ds(on) (ohm) i d (a) 0.112 @ v gs = -10v -1.5 0.172 @ v gs = -4.5v -1.2 product summary -30 ? low r ds(on) provides higher efficiency and extends battery life ? low thermal impedance copper leadframe sc70-3 saves board space ? fast switching speed ? high performance trench technology notes a. surface mounted on 1? x 1? fr4 board. b. pulse width limited by maximum junction temperature d s g symbol maximum units v ds -30 v gs 20 t a =25 o c -1.5 t a =70 o c -1.2 i dm -2.5 i s 0.28 a t a =25 o c 0.34 t a =70 o c 0.22 t j , t stg -55 to 150 o c continuous source current (diode conduction) a absolute maximum ratings (t a = 25 o c unless otherwise noted) parameter pulsed drain current b v gate-source voltage drain-source voltage continuous drain current a i d a power dissipation a p d operating junction and storage temperature range w symbol maximum units t <= 5 sec 375 steady-state 430 thermal resistance ratings parameter o c/w maximum junction-to-ambient a r thja 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com AM1331P product specification
AM1331P notes a. pulse test: pw <= 300us duty cycle <= 2%. b. guaranteed by design, not subject to production test ing. c. repetitive rating, pulse width limited by junction t emperature. min typ max gate-threshold voltage v gs(th) v ds = v gs , i d = -250 ua -1 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na v ds = -24 v, v gs = 0 v -1 v ds = -24 v, v gs = 0 v, t j = 55 o c -10 on-state drain current a i d(on) v ds = -5 v, v gs = -10 v -5 a v gs = -10 v, i d = -1.5 a 112 v gs = -4.5 v, i d = -1.2 a 172 forward tranconductance a g fs v ds = -5 v, i d = -1.5 a 9 s diode forward voltage v sd i s = -0.46 a, v gs = 0 v -0.65 v total gate charge q g 7.2 gate-source charge q gs 1.7 gate-drain charge q gd 1.5 turn-on delay time t d(on) 10 rise time t r 9 turn-off delay time t d(off) 27 fall-time t f 11 r ds(on) m ? unit v dd = -10 v, i l = -1 a, v gen = -4.5 v, r g = 6 ? ns dynamic b v ds = -10 v, v gs = -5 v, i d = -1.5 a nc drain-source on-resistance a specifications (t a = 25 o c unless otherwise noted) ua i dss zero gate voltage drain current static test conditions symbol parameter limits product specification 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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